收藏本站
NTR1P02L, NVTR01P02L
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate ? Body Leakage Current
(V GS = 0 V, I D = ? 10 m A)
(V DS = ? 16 V, V GS = 0 V)
(V DS = ? 16 V, V GS = 0 V,
T J = 125 ° C)
(V GS = ± 12 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
? 20
? 1.0
? 10
± 100
V
m A
nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain ? to ? Source
On ? Resistance
(V DS = V GS , I D = ? 250 m A)
(V GS = ? 4.5 V, I D = ? 0.75 A)
(V GS = ? 2.5 V, I D = ? 0.5 A)
V GS(th)
r DS(on)
? 0.7
? 1.0
0.140
0.200
? 1.25
0.22
0.35
V
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = ? 5.0 V)
(V DS = ? 5.0 V)
(V DS = ? 5.0 V)
C iss
C oss
C rss
225
130
55
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
7.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V GS = ? 4.5 V, V DD = ? 5.0 V,
I D = ? 1.0 A, R L = 5.0 W ,
R G = 6.0 W )
t r
t d(off)
t f
15
18
9
Total Gate Charge
(V DS = ? 16 V, I D = ? 1.5 A,
V GS = ? 4.5 V)
Q T
3.1
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
I S
I SM
? 0.6
? 0.75
A
Forward Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(V GS = 0 V, I S = ? 0.6 A)
(I S = ? 1.0 A, V GS = 0 V,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
16
11
5.5
8.5
? 1.0
V
ns
nC
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTR1P02T1 MOSFET P-CH 20V 1A SOT-23
NTR2101PT1G MOSFET P-CH 8V 3.7A SOT-23
NTR3161NT1G MOSFET N-CH 20V 3.3A SOT-23
NTR3162PT3G MOSFET P-CH 20V 2.2A SOT-23
NTR4003NT1G MOSFET N-CH 30V 500MA SOT-23
NTR4101PT1G MOSFET P-CH 20V 1.8A SOT-23
NTR4170NT3G MOSFET N-CH 30V 3.2A SGL SOT23-3
NTR4171PT3G MOSFET P-CH 30V 2.2A SOT23-3
相关代理商/技术参数
NTR1P02T1 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR1P02T1G 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR1P02T1G 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETP-CHANNEL20V V(BR)DSS 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 1A SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS
NTR1P02T1G-CUT TAPE 制造商:ON 功能描述:NTR Series P-Channel 20 V 148 mOhm 440 mW Surface Mount Power MOSFET - SOT-23
NTR1P02T3 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR1P02T3G 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR2 制造商:RADIOMETRIX 制造商全称:RADIOMETRIX 功能描述:UHF Narrow Band FM Transceiver
NTR2101P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET